tc74vhcv07ft/fk 2010-07-09 1 toshiba cmos digital integrated ci rcuit silicon monolithic tc74vhcv07ft,TC74VHCV07FK hex schmitt buff er (open drain) the tc74vhcv07 is an advanced high speed cmos buffer fabricated with silicon gate cmos technology. it achieves the high speed operat ion similar to equivalent bipolar schottky ttl while maintaining the cmos low power dissipation. output have high performance mos n-channel transistor. (open-drain outputs) input pin have hysteresis be tween the positive-going and negative-going thresholds. thus the tc74vhcv07 is capable of squaring up transitions of slowly changing input signals such as line receivers. input protection and output circuit ensure that 0 to 5.5 v can be applied to the input and output pins without regard to the supply voltage. these structure preven ts device destruction due to mismatched supply and input/output voltages such as battery back up, etc. features ? high speed: t pz = 3.8 ns (typ.) at v cc = 5 v ? low power dissipation: i cc = 2 a (max) at ta = 25c ? wide operating voltage range: v cc (opr) = 1.8 v to 5.5 v ? ouput current: i ol = 16 ma (min) (v cc = 4.5 v) ? available in tssop and vssop (us) ? power-down protection provided on all inputs and outputs ? pin and function compatible with the 74 series (74ac/vhc/hc/f/als/ls etc.) 07 type tc74vhcv07ft TC74VHCV07FK weight tssop14-p-0044-0.65a : 0.06 g ( typ ) vssop14-p-0030-0.50 : 0.02 g ( typ )
tc74vhcv07ft/fk 2010-07-09 2 pin assignment truth table a y l l h z system diagram (per gate) a y v cc 9 6a 6y 5a 8 14 13 12 11 10 1a 1 2 3 4 5 6 7 2y 3a 3y gnd 5y 4a 4y (top view) 1y 2a
tc74vhcv07ft/fk 2010-07-09 3 absolute maximum ratings (note1) characteristics symbol rating unit supply voltage range v cc ? 0.5 to 7.0 v dc input voltage v in ? 0.5 to 7.0 v dc output voltage v out 0.5 to 7.0 (note 2) v input diode current i ik ? 50 ma output diode current i ok ? 50 (note 3) ma dc output current i out 50 ma power dissipation p d 180 mw dc v cc /ground current i cc /i gnd r100 ma storage temperature t stg ? 65 to 150 c note 1: exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in ic performance or even destruction. using continuously under heavy loads (e.g. the app lication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 2: output in off-state. i out absolute maximum rating must be observed (output in low state) note 3: v out gnd operating ranges (note1) characteristics symbol rating unit power supply voltage v cc 1.8 to 5.5 v input voltage v in 0 to 5.5 v output voltage v out 0 to 5.5 v operating temperature t opr 40 to 85 c input rise and fall time dt/dv 0 to 2 0 (v cc = 3.3 r 0.3 v) 0 to 1 (v cc = 5 r 0.5 v) ms/v note 1: the operating ranges must be maintai ned to ensure the normal op eration of the device. unused inputs must be tied to either v cc or gnd.
tc74vhcv07ft/fk 2010-07-09 4 electrical characteristics dc characteristics test condition ta = 25c ta = 40 to 85c characteristics symbol v cc (v) min typ. max min max unit positive threshold voltage v p ? 1.8 2.3 3.0 4.5 5.5 ? ? ? ? ? ? ? ? ? ? 1.65 1.85 2.20 3.15 3.85 ? ? ? ? ? 1.65 1.85 2.20 3.15 3.85 negative threshold voltage v n ? 1.8 2.3 3.0 4.5 5.5 0.15 0.45 0.90 1.35 1.65 ? ? ? ? ? ? ? ? ? ? 0.15 0.45 0.90 1.35 1.65 ? ? ? ? ? v hysteresis voltage v h ? 1.8 2.3 3.0 4.5 5.5 0.15 0.20 0.30 0.40 0.50 ? ? ? ? ? 1.05 1.10 1.20 1.40 1.60 0.15 0.20 0.30 0.40 0.50 1.05 1.10 1.20 1.40 1.60 v i ol = 50 a 1.8 3.0 4.5 ? ? ? 0.0 0.0 0.0 0.1 0.1 0.1 ? ? ? 0.1 0.1 0.1 low-level output voltage v ol v in = v il i ol = 8 ma i ol = 16 ma 3.0 4.5 ? ? ? ? 0.36 0.44 ? ? 0.44 0.55 v 3-state output off-state current i oz v in v ih, v out 0 to 5.5v 1.8 to 5.5 ? ? 0.25 ? 2.5 a power-off leakage current i off v in /v out 5.5 v 0 ? ? 0.5 ? 5.0 a input leakage current i in v in = 5.5 v or gnd 0 to 5.5 ? ? 0.1 ? 1.0 a quiescent supply current i cc v in = v cc or gnd 5.5 ? ? 2.0 ? 20.0 a
tc74vhcv07ft/fk 2010-07-09 5 ac characteristics (input: t r = t f = 3 ns) test condition ta = 25c ta = 40 to 85c characteristics symbol v cc (v) c l (pf) min typ. max min max unit 15 ? 6.7 10.4 1.0 13.0 2.5 0.2 50 ? 9.4 15.2 1.0 18.0 15 ? 5.2 7.1 1.0 8.5 3.3 0.3 50 ? 7.1 10.6 1.0 12.0 15 ? 3.8 5.5 1.0 6.5 propagation delay time t pzl r l = 1 k
5.0 0.5 50 ? 5.3 7.5 1.0 8.5 ns 2.5 0.2 50 ? 12.2 15.2 1.0 18.0 3.3 0.3 50 ? 9.5 10.6 1.0 12.0 propagation delay time t plz r l = 1 k
5.0 0.5 50 ? 7.0 7.5 1.0 8.5 ns input capacitance c in ? ? 4 10 ? 10 pf output capacitance c out ? ? 5 ? ? ? pf power dissipation capacitance c pd (note) ? 4 ? ? ? pf note: c pd is defined as the value of the internal equivale nt capacitance which is calculated from the operating current consumption without load. average operating current can be obtained by the equation: i cc (opr) = c pd v cc f in + i cc /6 (per gate) noise characteristics (input: t r = t f = 3 ns) test condition ta = 25c characteristics symbol v cc (v) typ. limit unit quiet output maximum dynamic v ol v olp c l = 50 pf 3.3 5.0 0.3 0.6 ? ? v quiet output minimum dynamic v ol v olv c l = 50 pf 3.3 5.0 0.1 0.2 ? ? v minimum high level dynamic input voltage v ihd c l = 50 pf 5.0 ? 3.5 v maximum low level dynamic input voltage v ild c l = 50 pf 5.0 ? 1.5 v
tc74vhcv07ft/fk 2010-07-09 6 package dimensions weight: 0.06 g (typ.)
tc74vhcv07ft/fk 2010-07-09 7 package dimensions weight: 0.02 g (typ.)
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